MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

Signal definitions: A = Address DIN  = Data in

DOUT/DQ  = Data out

WE  = Write enable

CE = Chip enable

O = Output enable

Transition definitions:

H = Transition to high

L = Transition to low

V = transition to valid

X = Transition to invalid or don't care

Z = Transition to off (high impedance)

CHIP ENABLE   CE

WRITE ENABLE   WE

tWLEH

The example shows Write pulse setup time defined as tWLEH-time from Write Enable to Low Chip Enable High.

Timing limits.  The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view.  Thus, address set up time is shown as a minimum since the system must supply at least that much time (even though most devices do not require it).  On the other hand, responses from the memory are specified from the device point of views. Thus, the access time is shown as a maximum since the device never provides data later than that time.

Waveforms:

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