MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

TABLE I. Electrical performance characteristics (device types 01 through 06 and device types 09 and 10).- Continued.

Test	Symbol	Conditions VSS = 0 V, VCC = 5.5 V -55°C ≤ TC ≤ +125°C unless otherwise specified	Device types	Limits		Unit
Test	Symbol		Device types	Min	Max	Unit
0utput capacitance	C0	TC = +25°C, VCC = GND VIN = GND, f = 1 MHz	01,03,04, 05,06,09,10		12	pF
0utput capacitance	C0	TC = +25°C, VCC = GND VIN = GND, f = 1 MHz	02		14	pF
Read or write cycle time	tAVAV	VCC = 4.5 V to 5.5 V See figure 4	01	150		ns
			03	85
			04	90
			05	200
			06	45
			09	70
			10	70
Address access time	tAVQV		01		150	ns
			02		200
			03		85
			04		90
			05		200
			06		45
			09		70
			10		70
Chip enable access time	tELQV		01		150	ns
			02		200
			03		85
			04		90
			05		200
			06		45
			09		70
			10		70
Chip disable to output disable time	tEHQZ		01,04		50	ns
			02		80
			03		40
			05		60
			06		25
			09		40
			10		40
0utput hold after address change	tAVQX		01,05	0		ns
			06	3
			03,04, 09,10	5
Chip enable to output active	tELQX		01,05	0		ns
			02	10
			06	3
			03,04, 09,10	5

See footnotes at end of table.