MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

TABLE I. Electrical performance characteristics (device types 01 through 06 and device types 09 and 10).- Continued.

Test	Symbol	Conditions VSS = 0 V, VCC = 5.5 V -55°C ≤ TC ≤ +125°C unless otherwise specified	Device types	Limits		Unit
Test	Symbol		Device types	Min	Max	Unit
Write pulse width	tWLWH	VCC = 4.5 V to 5.5 V See figure 4	01	90		ns
			02	200
			03	45
			04	55
			05	120
			06	30
			09	40
			10	40
Chip enable to end-of- write	tELWH		01	90		ns
			02	200
			03	65
			04	55
			05	120
			06	35
			09	55
			10	45
Data setup to end-of- write	tDVWH		01	50		ns
			02	80
			03	35
			04	30
			05	70
			06	25
			09	30
			10	30
Data hold after end-of- write	tWHDX		01,04,05	15		ns
			02	10
			03,09	0
			06	5
			10	10
Address setup before write low	tAVWL		01,04,05, 10	10		ns
			06	5
			03,09	0
Address setup to end-of-write	tAVWH		01	120		ns
			03	65
			04	80
			05	140
			06	35
			09	55
			10	50
Write recovery time	tWHAX		01,04,05, 10	10		ns
			06	5
			03,09	0

See footnotes at end of table.