MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

TABLE I. Electrical performance characteristics (device types 07 and 08) - Continued.

Test	Symbol	Conditions VSS = 0 V, VCC = 5.5 V -55°C ≤ TC ≤ +125°C unless otherwise specified	Device types	Limits		Unit
Test	Symbol		Device types	Min	Max	Unit
Chip enable output disable	tEHQZ 1/	See table III	07 08		25 50	ns
Chip enable pulse negative width	tELEH		07 08	100 125		ns
Chip disable output hold time	tEHQX 1/		07 08	20 40		ns
Address setup time	tAVEL		07 08	0 0		ns
Address invalid output hold time	tAXQX 1/		07 08	40 60		ns
Write enable pulse width	tWLWH		07 08	75 100		ns
Write enable pulse setup time	tWLEH		07 08	100 125		ns
Address setup time	tAVWL		07 08	10 10		ns
Chip enable to end-of-write	tELWH	See table III I0 = 0; VI = VCC or GND	07 08	100 125		ns
Write disable output enable time	tWHQX 1/	See table III	07 08	0 0		ns
Address valid to end-of-write	tAVWH		07 08	100 125		ns
Address hold time	tWHAX		07 08	20 25		ns
Address hold time	tEHAX		07 08	0 0		ns
Address valid to end-of-write	tAVEH		07 08	100 125		ns
Write enable output disable time	tWLQZ 1/		07 08		25 50	ns
Data setup time	tDVWH		07 08	75 100		ns
Data hold time	tWHDX		07 08	20 20		ns
Data setup time	tDVEH		07 08	75 100		ns
Data hold time	tEHDX		07 08	0 0		ns

1/ This parameter is guaranteed but not tested.