MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

START

WRITE BACKGROUND DATA AT ALL MEMORY LOCATIONS

READ BACKGROUND DATA AT ALL MEMORY LOCATIONS

DOSE ADDRESS EQUAL MAXIMUM ADDRESS

YES

SET ADDRESS TO ZERO

NO

A        READ BACKGROUND DATA AT ADDRESS LOCATION

INCREMENT ADDRESS COUNT BY 1

A DESELECTED THE CHIP, THEN INTENDS

TO WRITE COMPLEMENT DATA INTO THE

ADDRESS LOCATION

HALT

SELECTS THE CHIP, READ BACKGROUND DATA AT ADDRESS LOCATION

Step 1.  Write the array with background data. Step 2.  Read the array for background data.

Step 3.  Read address location zero for background data.

Step 4.  Apply a Write cycle while deselecting the device (verifies that a Write operation cannot be performed while the device is disabled).

Step 5.  Select the chip, and read address location zero for background data. Step 6.  Repeat steps 3 through 5 for each address location (sequentially). Step 7.  Repeat steps 1 through 6 with complement background data.

FIGURE 7.  Not write pattern flow chart.

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