MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

TABLE I. Electrical performance characteristics (device types 01 through 06 and device types 09 and 10).- Continued.

Test	Symbol	Conditions VSS = 0 V, VCC = 5.5 V -55°C ≤ TC ≤ +125°C unless otherwise specified	Device types	Limits		Unit
Test	Symbol		Device types	Min	Max	Unit
Output enable access time	tOLQV	VCC = 4.5 V to 5.5 V See figure 4	01		75	ns
			02		80
			04		65
			05		100
			10		50
Output enable to output active	tOLQX		01,04,05	0		ns
			02	10
			10	5
Output enable to output active	tOHQZ		01,05		60	ns
			02		80
			04		40
			10		35
Address to chip enable setup time	tAVEL		02	0		ns
Address to chip enable hold time	tELAX		02	50		ns
Chip enable pulse negative width	tELEH		02	200		ns
Chip enable pulse positive width	tEHEL		02	80		ns
Write enable pulse setup time	tWLEH		02	200		ns
Read or write cycle time	tELEL		02	280		ns

See footnotes at end of table.