MIL-M-38510/291B
4. VERIFICATION
4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall not effect the form, fit, or function as described herein.
4.1.1 Step coverage acceptance criteria. The step coverage acceptance criteria (class S microcircuits) of 3.7.1 of method 2018 should read, "Oxide steps". All four directional edges of every type of oxide step (contact window or other type of oxide step) shall be examined (refer to 3.4.2). A directional edge shall be unacceptable if any defect or combination of defects, excluding thinning, reduces the cross section area on either side of the directional edge. The metal shall not be thinned to less than 4,000 A. For an oxide step (contact window or other type of oxide step) to be acceptable, all four directional edges must be covered with metallization (in accordance with 3.4.2) and be acceptable (in accordance with the preceding sentence) except in the cases described in 3.7.1a and
3.7.1b. Where all contact cuts are completely covered by metal, the metallization viewed from the normal viewing angle (refer to 3.4.1) will show evidence of contoured metal flow into the contact area. Verification of the actual step coverage shall be determined by cross sectioning an additional die from the same wafer or using a test die to show contact step coverage of 4,000 A or more.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.
4.3 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted prior to qualification, and conformance inspection. The following additional criteria shall apply:
a. Delete the sequence specified in 3.1.9 through 3.1.13 of method 5004 and substitute lines 1 through 5 of table II herein. b. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the device
manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under document
control by the device manufacturer's Technology Review Board (TRB) in accordance with MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall specify the inputs, outputs, biases,
and power dissipation, as applicable, in accordance with the intent specified in test method 1015 of MIL-STD-883.
c. Interim and final electrical parameters shall be as specified in table II, herein
d. Post dynamic burn in electrical parameter measurements may, at the manufacturer's option, be performed separately or included in the final electrical parameter measurements.
e. The manufacturers of SOS devices shall use a high temperature stress test prior to the static burn in. Conditions shall be static II, +125°C, supply voltage at 7 V ±0.5 V, and a duration of 48 hours minimum. A PDA of 15 percent shall be imposed. Devices need not be serialized prior to stress testing.
f. At the manufacturer's option, class S visual inspection is to be performed in accordance with MIL-STD-883, method 2010, condition A, except as follows:
(1) High magnification inspection is performed at 100X to 300X on the high current area of the chip.
(2) Condition A criteria 3.1.1.1 and 3.1.1.2 shall be replaced by condition B criteria, respectively, however, the 75 percent of the original metal width over passivation step requirements shall be reduced to 50 percent, and underlying oxide must also be exposed.
(3) Criteria 3.1.1.7 shall apply to three areas, two opposite corners and one area in the center of sufficient complexity to assure general alignment and contact coverage, and shall consist only of the area in the immediate field of view.
(4) Condition A criteria 3.1.3c shall be replaced by condition B criteria. Cracks greater than 5 mils are rejected only if they point to or cross the scribe grid line.
(5) Burn in testing shall be performed at an operating voltage of 7 V ±0.5 V, if this option is chosen.
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