MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Test

Symbol

Conditions

VSS  = 0 V, VCC = 5.5 V

-55°C ≤ TC  ≤ +125°C

unless otherwise specified

Device

types

Limits

Unit

Min

Max

Operating supply current

ICC1

Addresses cycling f = 1 MHz

CE = VIL, I0  = 0 (outputs are open)

01,04,05,

10

70

mA

02

10

03,09

50

06

100

Standby supply current

ICC2

Addresses stable

CE  = VCC -0.3 V, I0  = 0

01,02,03,

04,05,09,

10

100

µA

ICC3

Address stable

CE  = VIH, I0 = 0

03,09

5

mA

01,04,05,

06,10

10

Data retention supply current

ICC4

VCC  = 2.0 V, I0 = 0

CE  = VCC    -0.3 V

01,02,03,

04,05,09,

10

50

µA

Low level output voltage

VOL

VCC  = 4.5 V

IOL = 4.0 mA

01,04,05,06

10

0.4

V

IOL = 3.2 mA

02

0.4

IOL = 8.0 mA

03,09

0.4

High level output voltage

VOH

VCC  = 4.5 V

IOH  = -1.0 mA

01,02,04,

05,06,10

2.4

V

IOH  = -4.0 mA

03,09

2.4

Input leakage current

IIL

VIN  = GND

01,04,05,

10

-1

1

µA

IIH

VIN  = 5.5 V

02,03,09

-1

1

06

-10

10

High impedance output

leakage current

IOLZ

VOUT  = GND

CE  = VIH

01,03,04,

05,09,10

-1

1

µA

IOHZ

VOUT  = 5.5 V

02

-1

1

06

-20

20

Input capacitance

CI

TC = +25°C, VCC  = GND VIN  = GND, f = 1 MHz

01,03,04,

05,06,09,10

10

pF

02

12