MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Line

No.

MIL-PRF-

38535

Test requirements

Class S devices  1/  2/

Class B devices  1/  2/

Reference paragraph

Table III 3/ subgroups

Table

Iv 4/ delta limits

Test circuit figure

Table v 5/ subgroups

Reference paragraph

Table III 3/ subgroups

Table

Iv 4/ delta limits

Test circuit figure

Table v 5/ subgroups

1

Interim

electrical parameters

1

2, 8*

(hot only)

10

2

Static burn in

4.3b

3

Same as 6/

line 1

1*

∆

4

Dynamic burn in

4.3b

7/

4.3b

7/

5

Same as line

1

4.3d

1*

∆

4.3d

1*

∆

6

Final

electrical parameters

1*, 2, 3, 8,

9,10, 11

1*,2, 3, 7,

8, 9, 10,

11,

7

Group A test requirements

4.4.1

1, 2, 3, 4,

8, 9, 10,

11, 12

4.4.1

1, 2, 3, 4,

7, 8, 9,

10, 11

8

Group B end- point

electrical test parameters when using

the method

5005 QCI

option.

4.4.2

1, 2, 4,

8, 9, 10,

11

∆

4.4.2

4.5.2

1   8/

9

Group C

end point electrical test

parameters

1, 2, 4,

8, 9, 10,

11

4.4.3

1, 7, 9

∆

10

Group D end point electrical test

parameters,

4.4.4

1, 2, 3

4.4.4

1, 7, 9

11

Group E

end point electrical test parameters,

4.5.4

Table

v

1, 2

4.5.4

1, 2