MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

4.5 Methods of Inspection. Methods of inspection shall be specified in the appropriate tables and as follows:

4.5.1 Voltage and current. All voltages given are referenced to the microcircuit VSS terminal. Currents given are conventional and positive when flowing into the referenced terminal.

4.5.2 Delta measurements. Delta measurements, as specified in table II, shall be made and recorded before and after the required burn in screens and steady state life tests to determine delta compliance. The electrical parameters to be measured, with associated delta limits are listed in table IV herein.

TABLE IV. Delta limits at +25°C

Parameters 1/	Limits
Parameters 1/	02, 03, 04, 09, 10	07, 08	01, 05, 06
ICC	+30 µA	±30 µA
VOL	+60 mV	±40 mV	+60 mV
VOH	-400 mV	±340 mV	-200 mV
IIL	-500 nA	±100 nA	-50 nA
IIH	+500 nA	±100nA	+50 nA

1/ Conditions and mechanization of measurements shall be as specified in table III, subgroup 1.

4.5.3 Quiescent supply current tests. When performing quiescent supply current measurements, the meter shall be placed so that all currents flow through the meter.

4.5.4 RHA testing. The RHA testing shall be performed in accordance with procedures and sampling specified in MIL-PRF-38535 and herein:

a. Before irradiation, selected samples shall be assembled in qualified packages and pass the governing electrical parameters

(group A, subgroup 1 at +25°C).

b. Radiation exposure shall be performed according to method 1019 of MIL-STD-883 with the devices biased in accordance with table V, and meet the group E end point electrical parameters as defined in table I at +25°C ±5°C after exposure. The ionizing radiation exposure shall be 200 KRads (Si).

4.6 Data reporting. When specified in the contract or purchase order, a copy of the following data, as applicable, shall be supplied: a. Attributes data for all screening tests (see 4.3) and variables data for all static burn in, dynamic burn in, and steady state life tests. b. A copy of each radiograph.

c. The quality conformance inspection data (see 4.4).

d. Parameter distribution data on parameters evaluated during burn in. e. Final electrical parameters data.