MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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TABLE III. Group A inspection for device type 02 - Continued. 11

Subgroup	Symbol	MIL- STD- 883 method	Case X	4	5	6	7	8	9	10	11	13	14	15	16	18	19	20	21	22	23	24	25	26	28	29	32	Algorithm	Measured terminal	Test limits		Unit
			Case J	1	2	3	4	5	6	7	8	9	10	11	12	13	14	15	16	17	18	19	20	21	22	23	24			Test limits
			Test no.	A7	A6	A5	A4	A3	A2	A1	A0	DQ0	DQ1	DQ2	VSS	DQ3	DQ4	DQ5	DQ6	DQ7	CE	A10	OE	WE	A9	A8	VCC			Min	Max
2	Same tests, terminal conditions, and limits as for subgroup 1, except TC = +125°C.
3	Same tests, terminal conditions, and limits as for subgroup 1, except TC = -55°C.
4 TC=+25°C	CIN COUT	3012	64 65	61	61	61	61	61	61	61	61	61	61	61	GND "	61	61	61	61	61	61	61	61	61	61	61			Input Output		12 14	pF pF
7 TC=+25°C	I1O VDR	Function tests	66 67	71 81	71 81	71 81	71 81	71 81	71 81	71 81	71 81	71 81	71 81	71 81	" "	71 81	71 81	71 81	71 101	71 101	71	71	71	71	71	71	4.5 V 2.0 V	Pattern 5 Pattern 4
8	Same tests, terminal conditions, and limits as for subgroup 7, except TC = +125°C and -55°C.
9 TC=+25°C	Func- tional tests		68 69	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	GND "	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	91 91	4.5 V 5.5 V	Patterns 1,3,5 Patterns 1,3,5	DQ DQ
9 TC=+25°C	tELQV		70 71												" "												4.5 V 5.5 V	Pattern 3 Pattern 3	DQ DQ		200 200	ns ns
10	Same tests, terminal conditions, and limits as for subgroup 9, except TC = +125°C.
11	Same tests, terminal conditions, and limits as for subgroup 9, except TC = -55°C.

See footnotes at end of device type 02.