MIL-M-38510-291 Microcircuits, Digital, Cmos 16,384 Bit Static Random Access Memory Ram Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, CMOS, 16,384 bit static random access memory microcircuits. Two product assurance classes and a choice of case outlines, lead finishes, and radiation hardness assured RHA products are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/291B

9/    Timing waveforms shown on figure 4 shall be applied while performing a WRITE/WRITE address complement pattern

(see figure 8).  This procedure ensures that the following parameters meet the specified limits:

The output shall be loaded with the load specified on figure 5.  If the test equipment limitations prevent the simultaneous application or verification of all the specified parameters, multiple executions of the algorithm may be required to effect the measurement of all dynamic parameters.

10/  When testing subgroup 9, device type 09 will have the same test conditions as device type 03, except for the following:

a.        tELQV  = 70 ns maximum. b.        tELQV  = 70 ns maximum. c.        tAVQV = 70 ns maximum. d.        tAVQV = 70 ns maximum.

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