MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/2458

TA8LE VI. Post-irradiation end-point electrical parameters 1/

Test	Symbol	Conditions VSS = 0 V, TC = +25°C	Device type	Limits		Unit
Test	Symbol	Conditions VSS = 0 V, TC = +25°C	Device type	Min	Max	Unit
Low level output voltage	VOL	VDD = 4.5 V IOL = 2 mA	03, 04		0.4	V
Output low drive current	IOL	VDD = 4.75 V VOUT = 0.4 V	05	2.5		mA
Output low drive current	IOL	VDD = 4.75 V VOUT = 0.4 V	06	1.7		mA
High level output voltage	VOH	VDD = 4.5 V IOH = -1 mA	03, 04	2.4		V
Output high drive current	IOH	VDD = 4.75 V VOUT = 4.35 V	05	2.0		mA
Output high drive current	IOH	VDD = 4.75 V VOUT = 4.35 V	06	1.1		mA
Input leakage current	IIH IIL	VDD = 5.5 V VIN = rail	03, 04		±1	µA
Input leakage current	IIH IIL	VDD = 5.25 V VIN = rail	05, 06		±10	µA
High impedance output leakage	IOHZ IOLZ	VDD = 5.5 V VOUT = rail	03, 04		±10	µA
		VDD = 5.25 V VOUT = rail	05		±30
		VDD = 5.25 V VOUT = rail	06		±50
Quiescent supply current	IDD	VDD = 5.5 V	03		200	µA
	IDD	VDD = 5.5 V	04		250
	ISS	VDD = 5.25 V	05, 06		1,000
Operating current	IDDOP	VDD = 5.5 V f = 1 MHz	03, 04		7	mA
		VDD = 5.25 V f = 1 MHz	05		4
		VDD = 5.25 V f = 1 MHz	06		6
Address access time	tAVQV	See table III	03, 04		320	ns
Address access time	tAVQV	See table III	05, 06		250	ns
Read or write cycle time	tELEL	See table III	03, 04		420	ns
Read or write cycle time	tAVAV	See table III	05, 06		250	ns
Data retention quiescent supply current.	ICCDR	VDD = 3 V IOUT = 0, VIN = rail voltages	03, 04		100	µA
		VDD = 2.5 V IOUT = 0, VIN = rail voltages	50		400
		VDD = 2.5 V IOUT = 0, VIN = rail voltages	06		500

1/ The pre-irradiation end-point electrical parameter limit shall be as specified in table III herein at +25°C.