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MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/245B

TABLE II. Electrical test requirements.

Line no.

MIL-STD-883 test requirements

Class S device 1/ 2/

Class B device 1/ 2

Ref par.

Table 3/ III subgroups

Table IV delta 4/ limits

Ref par.

Table 3/ III subgroups

Table IV delta 4/ limits

Interim electrical parameters method 5004

4.2f

Static burn-in I

method 1015

4.2b, f

4.2g (5)

4.5.2

Not required

Same as line 1

�

Static burn-in II

method 1015

4.2g (5)

4.5.2

4.2b, h(4)

4.5.2

Not required

Same as line 1

4.2c

�

Dynamic burn-in method 1015

4.2b,g(6)

4.5.2

required

Same as line 1

4.2c

�

4.2c

�

Final electrical parameters method 5004

1*, 2, 3

8, 9, 10, 11

1*, 2, 3

8, 9,

Group A test requirements method 5005

4.4.1

1, 2, 3, 4,

8, 9, 10,

11, 12

4.4.1

1, 2, 3, 4,

9, 10, 11

Group B test requirements method 5005

4.4.2

4.5.3

1, 2, 3, 8,

9, 10, 11

�

Group C end-point electrical parameters method 5005

4.4.3

4.5.3

1,2

�

Group D end-point electrical parameters method 5005

4.4.4

1, 2, 3

4.4.4

1, 2

Group E test requirements method 1019

4.5.6

Table VI

4.5.6

Table VI

1/ Blank spaces indicate tests are not applicable.

2/ For subgroups 9, 10, and 11, only the worst value measured per device need be recorded when variables data is required

(e.g., during qualification).

3/ (*) indicates PDA applies to subgroup 1 (see 4.2.1).

4/ (�) indicates delta limits shall be required, and delta values shall be computed with reference to either the initial recorded electrical parameters (see 4.5.3), or to the previous interim electrical parameters, as indicated to the qualifying activity.

5/ The device manufacturer may, at their option, either perform delta measurements or within 24 hours after burn-in (removal

of temperature of bias) perform the final electrical parameter measurements, subgroup A1.