MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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Symbol

MIL-STD-

883 method

Case V

Terminal conditions 1/

Measured terminal

Test limits

Unit

11

12

13

14

15

16

17

18

Subgroup 1

TC = +25°C

Subgroup 2

TC = +125°C

Subgroup 3

TC = -55°C

Test No.

D

A11

A10

A9

A8

A7

A6

VDD

Min

Max

Min

Max

Min

Max

IIL  4/

3009

48

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

A0

-1.0

µA

49

"

"

"

"

"

"

"

"

A1

"

"

50

"

"

"

"

"

"

"

"

A2

"

"

51

"

"

"

"

"

"

"

"

A3

"

"

52

"

"

"

"

"

"

"

"

A4

"

"

53

"

"

"

"

"

"

"

"

A5

"

"

54

"

"

"

"

"

"

"

"

W

"

"

55

"

"

"

"

"

"

"

"

CE

"

"

56

GND

"

"

"

"

"

"

"

D

"

"

57

5.5 V

GND

"

"

"

"

"

"

A11

"

"

58

"

5.5 V

GND

"

"

"

"

"

A10

"

"

59

"

"

5.5 V

GND

"

"

"

"

A9

"

"

60

"

"

"

5.5 V

GND

"

"

"

A8

"

"

61

"

"

"

"

5.5 V

GND

"

"

A7

"

"

62

"

"

"

"

5.5 V

5.5 V

GND

"

A6

"

"

IOHZ

63

GND

GND

GND

GND

GND

GND

GND

5.5 V

Q

1.0

1.0

1.0

"

64

GND

GND

GND

GND

GND

GND

GND

"

Q

1.0

1.0

1.0

"

IOLZ

65

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

"

Q

-1.0

-1.0

-1.0

"

66

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

5.5 V

"

Q

-1.0

-1.0

-1.0

"

IDD1

3005

67

GND

GND

GND

GND

GND

GND

GND

"

VDD   5/

50

50

50

"

IDD2

68

"

"

"

"

"

"

"

"

VDD  6/

"

"

"

"

IDD3

69

"

"

"

"

"

"

"

"

VDD  7/

"

"

"

"

IDD4

70

"

"

"

"

"

"

"

"

VDD  13/

"

"

"

"

Subgroup 4

TC = +25°C

Min

Max

CI

3012

71

8/

8/

8/

8/

8/

8/

8/

GND

Each input

8

pF

Subgroup 8

TC = +125°C

Min

Max

PWR DWN

16/

72

9/

9/

9/

9/

9/

9/

9/

9/

VDD

2.0

V

ADD COMP

16/

73

10/

10/

10/

10/

10/

10/

10/

10/

Q

10/

10/

V