MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/2458

NOTES:

1. CL = 50 pF ±10%

2. Dynamic current load forces if used by tester. IOL = 2.0 mA and IOH = -1.0 mA.

3. All tTLH and tTHL ≤ 10 ns.

4. All generator output impedance = 50n.

5. All voltages measured with respect to GND terminal.

6. Load should be modified for high Z measurements.

7. See figure 4 for waveforms and timing conditions.

FIGURE 3. Switching time test circuit.