MIL-M-38510/245B
(2) Condition B criteria 3.1.1.7 shall apply to 3 areas, two opposite corners and one area in the center of sufficient complexity to assure general alignment and contact coverage, and consist only of the area in the immediate field of view.
(3) Condition B criteria 3.1.3c. Cracks greater than 5 mils are rejected only if they point or cross the scribe grid line.
(4) Burn in testing shall be performed at an operating voltage of 5.5 volts for device types 01 through 04, 6.5 volts minimum for device types 05 and 06, if this option is chosen.
i. For SOS product, diffusion fault criteria, passivation fault criteria, and oxide gate bridge inspection criteria are difficult to apply. Therefore inspect these devices for complete islands, bridging between islands, and missing adjacent contacts from a row in a contact chain.
j. The alternate screening procedures of MIL-STD-883, method 5004, shall be permitted as approved by the qualifying activity.
4.2.1 Percent defective allowable (PDA).
a. The class S device PDA shall be 5 percent for static burn-in and 5 percent for dynamic burn-in for all failures, with a
3 percent maximum on functional failures for either burn-in. Static burn-in failures for the split sequence shall be cumulative for determining PDA.
b. If interim electrical parameter measurements are made to remove defective devices from the lot prior to the burn-in sequence, the number of devices that fail these measurements may be excluded from the PDA calculations for class S and B devices. Following this, pre and post burn-in electrical parameter measurements results shall be used as specified to compute PDA's.
c. Those devices whose measured characteristics after burn-in exceed the specified delta (�) limits or specified electrical parameter limits are failures and shall be removed from the lot (see 3.6 and 4.5.3). The verified failures divided by the total number of devices in the lot initially submitted to burn-in shall be used to determine the percent defective for the lot and the lot shall be accepted or rejected based on the specified PDA or one device whichever
is greater.
4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.
4.4 Technology Conformance inspection (TCIJ. Technology conformance inspection shall be in accordance with MIL-PRF-
38535 and herein for groups A, B, C, and D inspections (see 4.4.1 through 4.4.4).
4.4.1 Group A inspection. Group A inspection shall be in accordance with table III of MIL-PRF-38535 and as follows:
a. Tests shall be as specified in table II herein. b. Subgroups 5, 6, and 7 shall be omitted.
c. Subgroup 4 (CI measurement) shall be measured only for initial qualification and after process or design changes which may affect input capacitance. Capacitance shall be measured between the designated terminal and VSS at a frequency of 1 MHz. This test shall be performed using a fixed sample size of 25 devices and an acceptance number of zero.
d. Subgroup 12 shall be added to the group A inspection requirements using an sample size serial number = 15 and consist of the procedures, test conditions, and limits specified in table III.
4.4.2 Group B inspection. Group B inspection shall be in accordance with table II MIL-PRF-38535.
4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:
a. End-point electrical parameters shall be as specified in table II herein.
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