MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/2458

TA8LE I. Electrical performance characteristics.

Test	Symbol	Conditions VSS = 0 V, VDD = 5.5 V -55°C ≤ TC ≤ +125°C unless otherwise specified	Device Type	Limits		Units
				Min	Max
Output hold from address change time 1/	tAVQZ	See table III	05		100	ns
			06		150
Data setup time	tDVWH		02	50		ns
			04	200
			05	120
			06	105

1/ This parameter is guaranteed but not tested.