MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/245B

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End-point electrical parameters shall be as specified in table II herein.

4.4.5 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness assured. RHA levels for device classes B and S shall be M, D, R, and H.

a. End-point electrical parameters shall be as specified in table II herein.

b. For device classes B and S subgroups 1 and 2 of table V method 5005 of MIL-STD-883, shall be tested as appropriate for device construction.

4.4.5.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL- STD-833 method 1019 and as specified herein.

a. Device shall be biased in accordance with table VII herein and meet the postirradiation end-point electrical parameters as defined in table VI herein as +25°C after exposure.

b. Bias may be interrupted for up to 1 minute to remove devices to remote bias fixture. The start and completion of the end-point electrical parameter measurements shall not exceed 1 hour following irradiation.

4.4.5.1.1 Accelerated aging test. Accelerated aging shall be performed on all devices requiring a RHA level greater than 5K rads (Si). The post-anneal end-point electrical parameter limits shall be as specified in table III herein and shall be the preirradiation end-point electrical parameter limit at +25°C ±5°C. Testing shall be performed at initial qualification and after any design or process changes which may effect the RHA response of the device.

4.4.5.2 Additional information. When specified in the purchase order or contract, a copy of the following additional data shall be supplied.

a. RHA upset levels. b. RHA delete limits.

4.4.6 Inspection of packaging. The inspection of package shall be as specified in.

4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows: NOTE: In order to prevent "latch-up" during device turn-on and also prevent a high initial operating current (IDDOP),

set all devices terminals equal to VSS. Raise VDD and CE simultaneously to normal system operating

VDD. Do not allow VIH at CE to exceed VDD +0.3 volts while rising. Not necessary for SOS products.

4.5.1 Voltage and current. All voltages given are referenced to the microcircuit VSS terminal. Currents given are conventional and positive when flowing into the referenced terminal.

4.5.2 Life test, burn-in, cooldown, and electrical test procedure. When devices are measured at +25°C following application of the steady-state life or burn-in test condition, all devices shall be cooled to +35°C prior to removal of bias voltages. Any electrical tests required shall first be performed at -55°C or +25°C prior to any +125°C tests that are required.

4.5.3 Delta measurements. Delta measurements, as specified in table II, shall be made and recorded before and after the required burn-in screens and steady state life tests to determine delta compliance. The electrical parameters to be measured, with associated delta limits are listed in table IV.