MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/2458

Timing parameter	Description	Device types
		01		02		Unit
		Min	Max	Min	Max
tELQV	Chip enable access time		120		120	ns
tAVQV	Address access time		120		120	ns
tELQX	Chip enable output enable time	5		5		ns
tWLQZ	Write enable output disable time				50	ns
tEHQZ	Chip enable output disable time		50		50	ns
tELEH	Chip enable pulse negative width	120		120		ns
tEHEL	Chip enable pulse positive width	50		50		ns
tAVEL	Address setup time	0		0		ns
tELAX	Address hold time	40		40		ns
tWLWH	Write enable pulse negative width	20		120		ns
tWLEH	Write enable pulse setup time to chip disable	70		120		ns
tWLEL	Write enable pulse setup time to chip enable	0		0		ns
tELWH	Write enable pulse hold time from chip enable	40		120		ns
tELDX	Write data hold time	25				ns
tDVWH	Data setup time			50		ns
tWHDX	Data hold time			0		ns
tELEL	Read or write cycle time	170		170		ns
tDVEL	Write data setup time	0				ns
tWHEH	Write enable high to chip enable high	10				ns
tQVWL	Data valid to write time			0		ns
tEHWH	Output high-Z time			0		ns
tDVWL	Data setup time	0				ns
tWLDX	Data hold time	25				ns
tWLDV	Write data delay time			70		ns
tWHEL	Write enable read mode setup time	0				ns

FIGURE 5. Timing test conditions over operating temperature range.