MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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MIL-M-38510/2458

TA8LE I. Electrical performance characteristics.

Test	Symbol	Conditions VSS = 0 V, VDD = 5.5 V -55°C ≤ TC ≤ +125°C unless otherwise specified	Device Type	Limits		Units
Test	Symbol		Device Type	Min	Max	Units
Chip enable output disable time 1/	tEHQZ	See table III	01, 02		50	ns
			03, 04		100
			05		100
			06		140
Chip enable pulse negative width	tELEH		01, 02	120		ns
			03, 04	300
			05	220
			06	200
Chip enable pulse positive width	tEHEL		01, 02	50		ns
Chip enable pulse positive width	tEHEL		03, 04	120		ns
Address setup time	tAVEL		01, 02	0		ns
Address setup time	tAVEL		03, 04	20		ns
Address hold time	tELAX		01, 02	40		ns
			03	50
			04	100
Address hold time from write	tWHAX		05	45		ns
Address hold time from write	tWHAX		06	40		ns
Write enable pulse width	tWLWH		01	20		ns
			02	120
			03	80
			04	300
			05	145
			06	150
Write enable pulse setup time	tWLEH		01	70		ns
			02	120
			03	200
			04	300
Early write pulse setup time	tWLEL		01, 02, 03, 04	0		ns