MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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Test

Symbol

Conditions

VSS  = 0 V, VDD = 5.5 V

-55°C ≤ TC  ≤ +125°C

unless otherwise specified

Device

Type

Limits

Units

Min

Max

Low level output voltage

VOL

VDD = 4.5 V IOL = 2 mA

01, 02,

03, 04

0.4

V

Output low drive current

IOL

VDD  = 4.75 V VOUT = 0.4 V

05

2.5

mA

06

1.7

High level output voltage

VOH

VDD = 4.5 V VIN = -1 mA

01, 02,

03, 04

2.4

V

Output high drive current

IOH

VDD = 4.75 V VIN = 4.35 V

05

2.0

mA

06

1.1

Positive clamping voltage

VIC

(POS)

IIN  = 100 µA    TC = +25°C

01, 02

0.1

2.0

V

IIN  = 50 µA    TC  = +25°C

03, 04

0.1

2.0

IIN  = 100 µA    TC = +25°C

05

0.1

3.0

06

0.2

3.0

Negative clamping voltage

VIC

(NEG)

IIN  = -100 µA    TC = +25°C

01, 02

-0.1

-2.0

V

IIN  = -50 µA    TC  = +25°C

03, 04

-0.1

-2.0

IIN  = -100 µA    TC = +25°C

05

-0.1

-3.0

06

-0.2

-3.0

Input leakage current

IIH

VDD  = 5.5 V           VIN  = 5.5 V

01, 02

03, 04

1

µA

VDD  = 5.25 V           VIN = 5.25 V

05, 06

10

Input leakage current

IIL

VDD  = 5.5 V           VIN  = 0 V

01, 02

03, 04

-1

µA

VDD  = 5.25 V           VIN = 0 V

05, 06

-10

High-impedance  output leakage

IOHZ

VDD  = 5.5 V     VOUT  = 5.5 V

01, 02

1.0

µA

03, 04

10

VDD  = 5.25 V     VOUT  = 5.25 V

05

30

06

50

High-impedance output leakage

IOLZ

VDD  = 5.5 V     VOUT  = GND

01, 02

-1.0

µA

03, 04

-10

VDD  = 5.25 V     VOUT  = GND

05

-30

06

-50