MIL-M-38510-245 Microcircuits, Digital, Cmos, 4096 Bit, Static Random Access Memory Sram, Bulk Silicon And Silicon On SapphireThis specification covers the detail requirements for bulk silicon and silicon on sapphire SOS, static, 4096 bit, random access memory microcircuits. Two product assurance classes, four radiation hardness assurance levels, and a choice of case outlines and lead finishes are provided and are reflected in the part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4

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Symbol

MIL-STD-

883 method

Case V

Terminal conditions 1/

Measured terminal

Test limits

Unit

11

12

13

14

15

16

17

18

Subgroup 1

TC = +25°C

Subgroup 2

TC = +125°C

Subgroup 3

TC = -55°C

K

15

16

17

18

21

22

23

24

Test No.

D3/Q3

D2/Q2

D1/Q1

D0/Q0

A9

A8

A7

VDD

Min

Max

Min

Max

Min

Max

IOHZ

7/

69

5.25 V

5.25 V

5.25 V

5.25 V

5.25 V

5.25 V

5.25 V

5.25 V

D3/Q3

5.0

50

5.0

µA

70

"

"

"

"

"

"

"

"

D2/Q2

"

"

"

"

71

"

"

"

"

"

"

"

"

D1/Q1

"

"

"

"

72

"

"

"

"

"

"

"

"

D0/Q0

"

"

"

"

73

"

"

"

"

"

"

"

"

D3/Q3

"

"

"

"

74

"

"

"

"

"

"

"

"

D2/Q2

"

"

"

"

75

"

"

"

"

"

"

"

"

D1/Q1

"

"

"

"

76

"

"

"

"

"

"

"

"

D0/Q0

"

"

"

"

IOLZ

6/

77

GND

GND

GND

GND

"

"

"

"

D3/Q3

-5.0

-50

-5.0

"

78

"

"

"

"

"

"

"

"

D2/Q2

"

"

"

"

79

"

"

"

"

"

"

"

"

D1/Q1

"

"

"

"

80

"

"

"

"

"

"

"

"

D0/Q0

"

"

"

"

81

"

"

"

"

"

"

"

"

D3/Q3

"

"

"

"

82

"

"

"

"

"

"

"

"

D2/Q2

"

"

"

"

83

"

"

"

"

"

"

"

"

D1/Q1

"

"

"

"

84

"

"

"

"

"

"

"

"

D0/Q0

"

"

"

"

ISS1

3005

85

GND

GND

GND

GND

GND

GND

GND

5.25 V

VSS     5/

-100

-1000

-100

"

ISS2

86

"

"

"

"

"

"

"

"

VSS     6/

"

"

"

"

ISS3

87

"

"

"

"

"

"

"

"

VSS    7/

"

"

"

"

ISS4

88

"

"

"

"

"

"

"

"

VSS     13/

"

"

"

"

Subgroup 4

TC = +25°C

Min

Max

CI

3012

89

8/

8/

8/

GND

Each

input

5

pF

Max

ICCDR

90

9/

9/

9/

9/

VDD

500

µA

PWR DWR

91

9/

9/

9/

9/

Q

2.5

V

Functional tests

15/

92

10/

10/

10/

10/

Q

10/

10/

V