MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVJ. Programming characteristics for circuit J.

Parameters	Symbol	Limits 1/			Unit
Parameters	Symbol	Min	Recommended	Max	Unit
Address input voltage 2/	VIH	2.4	5.0	5.0	V
Address input voltage 2/	VIL	0.0	0.4	0.8	V
Programming/verify voltage to VCC	VPH	11.75	12.0	12.25	V
Programming/verify voltage to VCC	VPL	4.5	4.5	5.5	V
Programming voltage current limit with VPH applied	ICCP	600	600	650	mA
Voltage rise and fall time	tr	1.0	1.0	10	µs
Voltage rise and fall time	tf	1.0	1.0	10	µs
Programming delay	td	10	10	100	µs
Programming pulse width	tP	100		1000	µs
Programming duty cycle	DC	----	50	90	%
Output voltage enable	VOPE	10.0	10.5	11.0	V
Output voltage disable 3/	VOPD	4.5	5.0	5.5	V

1/ TC = +25°C.

2/ Address and chip select shall not be left open for VIH.

3/ Disable condition shall be met with output open circuit.