MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

13/  For unprogrammed devices, apply 10 V to pin 4 (A4), apply VOH  to pin 21 (A10), and apply VOL  to pin 23 (A8) for circuit H.

14/  For unprogrammed devices, apply 10.5 V on pin 1 (A7) for circuit B devices..

15/  For unprogrammed devices, apply 10.5 V  to pin 3 (A5), apply 0 V to pins 4, 5, 6, 7, 8  (A4, A3, A2, A1, A0), and apply 3 V to pins 1, 2, 21, 22, 23,  (A7, A6, A10, A9, A8) for circuit G devices.

16/  For unprogrammed devices type 02 (828191), with date codes before 8626. apply 10.0 V on pin 6 (A2);  apply

5.0 V to all other addresses for circuit C devices.

17/  For unprogrammed device types 02 (with date codes 8626 or later) and 04 (828191A), apply 10.0 V on A4;

apply 5.0 V on A0, A1, A2, A3 and A6; and apply 0.5 V on A5, A7, A8, A9 and A10 for circuit C devices.

18/  For unprogrammed devices, apply 12.0 V on pin 8 (A0) for circuit D devices.

19/  For unprogrammed device type 05, apply 15.0 V to pin 4 (A5); apply 0.0 V to pins  5, 9 (A4, A0); apply 4.5 V to pins 3, 6, 7, 8 (A6, A3, A2, A1) for circuit C devices.

20/  For unprogrammed device type 02 (circuit K; 24 Dual-in-line) apply 5.0V to pin 24; 0.0V to pins 3, 5, 6, 7, 8, and

20; 0.0V to pins 3, 5, 6, 7, 8, and 20; 3.0V to pins 1, 2, 18, 19, 21, 22, and 23; 9.0V to pin 4.

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