MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

Pages 1 - 2 - 3 - 4 - 5 - 6 - 7 - 8 - 9 - 10 - 11 - 12 - 13 - 14 - 15 - 16 - 17 - 18 - 19 - 20 - 21 - 22 - 23 - 24 - 25 - 26 - 27 - 28 - 29 - 30 - 31 - 32 - 33 - 34 - 35 - 36 - 37 - 38 - 39 - 40 - 41 - 42 - 43 - 44 - 45 - 46 - 47 - 48 - 49 - 50 - 51 - 52 - 53 - 54 - 55 - 56 - 57 - 58 - 59 - 60

MIL-M-38510/210F

TABLE IVI. Programming characteristics for circuit I.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
VCC during programming	VCCP		5.0		5.5	V
High level input voltage during programming	VIHP		2.4		5.5	V
Low level input voltage during programming	VILP		0.0		0.45	V
Chip enable voltage during programming	VCEP	CE 1 pin	14.5		15.5	V
Output voltage during programming	VOP		19.5		20.5	V
Voltage on outputs not to be programmed	VONP		0		VCCP + 0.3	V
Current on outputs not to be programmed	IONP				20	mA
Rate of output voltage change	d(VOP)/dt		20		250	V/µs
Rate of chip enable voltage change	d(VCE)/dt	CE 1 pin	100		1000	V/µs
Programming period	tp		50		100	µs
VCC during programming verification	VCCL		4.5		5.0	µs

1/ TC = +25°C.