MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

4.15  Programming procedures for circuit H.  The programming characteristics of table IVH and the following procedures shall be used for programming the device.

a.  Connect the device in the electrical configuration for programming.  The waveforms on figure 5H and the programming characteristics of table IVH shall apply to these procedures.

b.  Address the word to be programmed, apply 5 V to VCC  and active levels to all chip Enable inputs. c.   Verify the status of a bit location by checking the output level.

d.  Decrease VCC  to 0 V.

e.  For bit locations that do not require programming, skip steps 4.15f through 4.15l. f.   Increase VCC  to VCC(pr)  with a minimum current capability of 250 mA.

g.  Apply VS(pr)  to all chip Enable inputs.  II ≤ 25 mA.  Active-high enables may be left high.

h.  Connect all outputs, except the one to be programmed, to VIL.  Only one bit is to be programmed at a time.

i.    Apply the output programming pulse for 20 ∝s.  Minimum current capability of the programming supply should be 250 mA.

j.    After terminating the output pulse, disconnect all outputs from VIL  conditions. k.   Reduce the voltage at  CE input to VIL.

l.    Decrease VCC  to 0 V.

m.    Return to 4.15e until all outputs in the word have been programmed. n.    Repeat 4.15c through 4.15l for each word in memory.

o.    Verify programming of every word after all words have been programmed using VCC  values of 4.5 V and

5.5 V.

p.    If any bit does not verify as programmed, it shall be considered a programming reject.

4.16  Programming procedures for circuit I.  The programming characteristics in table IVI and the following procedures shall be used for programming the device:

a.  Connect the device in the electrical configuration for programming.  The waveforms on figure 5I and the programming characteristics of table IVI shall apply to these procedures.

b.  Terminate all outputs with a 300 ν resistor to VONP.  Apply VIHP  to the  CE 2, CE3, and CE4  inputs and

VILP to the  CE 1  inputs.

c.   Address the PROM with the binary address of the selected word to be programmed.  Raise VCC  to VCCP. d.  After a delay of t1, apply only one VOP  pulse with a duration of tP, t2  and d(VOP)/dt to the output selected

for programming.  After a delay of t2  and d(VOP)/dt, pulse  CE 2  from VIHP  to VCEP  for the duration of tP,

2d(VCE)/dt, and t3;   CE 2  is then to go to VILP  level.

e.  To verify programming after  CE 1 has been set to VILP, lower VCC  to VCCL  after a delay of t4.  The

programmed output should remain in the logic '1' state.

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