MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

1.3  Absolute maximum ratings.

Supply voltage range  .............................................................................  -0.5 V dc to +7.0 V dc

Input voltage range  ................................................................................  -1.5 V dc at -10 mA to +5.5 V dc

Storage temperature range  ....................................................................  -65°C to +150°C Lead temperature (soldering, 10 seconds)..............................................  +300°C

Thermal resistance, junction to case (eJC):   1/

Cases J, L, and R..............................................................................   40°C/W maximum

Case K  .............................................................................................   60°C/W maximum

Case 3 ..............................................................................................   0.08°C/W maximum   2/ Output voltage range...............................................................................   -0.5 V dc to +VCC

Output sink current..................................................................................   100 mA

Maximum power dissipation (PD)  3/ .......................................................   1.02 W

Maximum,unction temperature (TJ)  4/....................................................   +175°C

1.4  Recommended operating conditions.

Supply voltage  .......................................................................................  +4.5 V dc minimum to

+5.5 V dc maximum

Minimum high-level input voltage (VIH) ...................................................  2.0 V dc Maximum low-level input voltage (VIL) ....................................................  0.8 V dc Normalized fanout (each output)   ..........................................................  8 mA    5/

Case operating temperature range (TC) ..................................................  -55 °C to +125 °C

2.  APPLICABLE DOCUMENTS

2.1  General.  The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples.  While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements of documents cited in sections 3,

4, or 5 of this specification, whether or not they are listed.

2.2  Government documents.

2.2.1  Specifications and Standards.  The following specifications and standards form a part of this specification to the extent specified herein.  Unless otherwise specified,  the issues of these documents are those cited in the solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535   -        Integrated Circuits (Microcircuits) Manufacturing, General Specification for. DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883       -        Test Method Standard for Microelectronics.

MIL-STD-1835     -        Interface Standard Electronic Component Case Outline

(Copies of these documents are available online at https://assist.dla.mil/quicksearch/ or from the

Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA  19111-5094.)

1/  Heat sinking is recommended to reduce the junction temperature.

2/  When a thermal resistance value is included in MIL-STD-1835, it shall supersede the value stated herein.

3/  Must withstand the added PD  due to short circuit test (e.g. IOS).

4/  Maximum junction temperature shall not be exceeded except for allowable short circuit duration burn-in

screening conditions per method 5004 of MIL-STD-883.

5/  16 mA for circuits A, B, D, F, H, and I devices.

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