MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVD. Programming characteristics for circuit D.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
Power supply voltage	VCC		6.4	6.5	6.6	V
Power supply rise time 2/	tr(VCC)		0.2	2.0		µs
Power supply fall time 2/	tf(VCC)		0.2	2.0		µs
VCC on time 3/	tON	See programming Time diagram
VCC off time 4/	tOFF	See programming Time diagram
Duty cycle for VCC		tON/(tOFF + tON)			50	%
Read delay before programming	tdRBP	Initial check		3.0		µs
Fuse read time	tW 5/			1.0		µs
Delay to VCC off	td(VCC) 5/			1.0		µs
Delay to read after programming	tdRAP 5/	Programming verification		3.0		µs
Chip select programming voltage	VCSP		20.0	20.0	22.0	V
Chip select program current limit	ICSP		175	180	185	mA
Input voltage low	VIL		0.0	0.0	0.4	V
Input voltage high	VIH		2.4	5.0	5.0	V
Delay to chip deselect	tdCS			1.0		µs
Chip select pulse rise time	trCS		3.0	4.0		µs
Delay to chip select time	tdAP		0.2	1.0		µs
Chip select pulse fall time	tfCS		0.1	0.1	1.0	µs

See footnotes at end of table.