MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVA. Programming characteristics for circuit A.

Parameter	Symbol	Limits 1/			Unit
Parameter	Symbol	Min	Recommended	Max	Unit
Address input voltage 2/	VIH VIL	2.4 0.0	5.0 0.4	5.0 0.5	V V
Programming Voltage to VCC low Program verify Verify voltage	VPH 3/ VPL VPHV VR 4/	10.75 0.0 ---- 4.5	11.0 0.0 5.5 ----	11.25 1.5 ---- 5.5	V " " "
Programming input low current at VPH	IILP	----	-300	-600	µA
Programming voltage (VCC) transition time	tTLH tTHL	1 1	5 5	10 10	µs µs
Programming delay	tD1 tD2	10 1	10 5	20 5	µs µs
Programming pulse width	tP 5/	90	100	110	µs
Programming duty cycle	PDC	----	30	60	%
Output voltage Enable Disable	VOPE 6/ VOPD	10.5 0.0	10.5 5.0	11.0 5.5	V V

During the programming the chip must be disabled for proper operation.

1/ TA = +25°C.

2/ No inputs should be left open for VIH.

3/ VPH source must be capable of supplying one ampere.

4/ It is recommended that post programming dual verification be made at V minR and V max R.

5/ Note step j in programming procedure.

6/ VOPE source must be capable of supplying 10 mA minimum.