MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVH. Programming characteristics for circuit H. 1/

Parameters	Symbol	Min	Nom	Max	Unit
Steady-state supply voltage	VCC	4.75	5	5.25	V
Input voltage	VIH	3	4	5	V
Input voltage	VIL	0	0	0.5	V
Voltage all outputs except the one to be programmed		0	0	0.5	V
Supply voltage level to program a bit	VCC(pr)	5.75	6	6.25	V
Select or enable level to program a bit	VS(pr)	9.75	10	11	V
Output level during interval t5	VO(PR)	15.75	16	16.25	V
Supply voltage during verification (see step 0)	Low	4.4	4.5	4.6	V
Supply voltage during verification (see step 0)	High	5.4	5.5	5.6	V
Time for VCC to settle and to verify need to program	t1	0	5	10	µs
Timing from VCC = 6 V until chip select (enable) is at 10 V	t2	5	5	10	µs
Timing from chip select (enable) high to start or program ramp	t3	0.1	5	10	µs
Ramp time, output program pulse	t4	10	15	20	µs
Duration of output program pulse	t5	15	20	20	µs
Time from end of program pulse to chip select (enable) low	t6	5	5	10	µs
Time from chip select (enable) low to VCC = 0 V	t7	0.1	5	5	µs
Time for cooling between bits	t8	30	50	100	µs
Time for cooling between words	t9	30	50		µs

1/ TC = +25°C.