MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

NOTES:

1. All delays between edges are specified from completion of the first edge, not midpoints.

2. Delays t1, t2, t3, and t4 must be greater than 100 ns; maximum delays of 1 µs are recommended to minimize heating during programming.

3. During tV the output being programmed is switched to the load R and verified.

4. Outputs not being programmed are connected to VONP through resistor which provides output

current limiting.

FIGURE 5I. Programming voltage waveforms during programming for circuit I.