MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

4.7 Programming procedure for circuit A. The programming characteristics of table IVA and the following procedures shall be used for programming the device.

a. Connect the device in the electrical configuration for programming. The waveforms on figure 5A and the programming characteristics of table IVA shall apply to these procedures.

b. Address the PROM with the binary address of the selected word to be programmed. Address inputs are TTL compatible. An open circuit shall not be used to address the PROM.

c. Apply VPL voltage to VCC.

d. Bring the CE X inputs high and the CEX inputs low to disable the device. The chip enables are TTL

compatible. An open circuit shall not be used to disable the device.

e. Disable the programming circuitry by applying a voltage of VOPD to the outputs of the PROM. f. Raise VCC to VPH with rise time less than or equal to tTLH.

g. After a delay equal to or greater than tD1, apply only one pulse with amplitude of VOPE and duration of tP to the output selected for programming. Note that the PROM is supplied with fuses intact, which generates an output high. Programming a fuse will cause the output to go low.

h. Lower VCC to VPL following a delay of tD2 from programming enable pulse applied to an output. i. Enable the PROM for verification by applying VIL to CE X and VIH to CEX.

j. Apply VPHV to VCC and verify bit is programmed.

k. Repeat 4.7a through 4.7j for all other bits to be programmed in the PROM.

l. If any bit does not verify as programmed, it shall be considered a programming reject.

4.8 Programming procedure for circuit B. The programming characteristics of table IVB and the following procedures shall be used for programming the device.

a. Connect the device in the electrical configuration for programming. The waveforms on figure 5B and the programming characteristics of table IVB shall apply to these procedures.

b. Apply VIH CE 1 and the binary address of the PROM word to be programmed. Raise VCC to VCCP.

c. After a tD delay, apply only one VOP to the output to be programmed high. Apply VOP to one output at a time.

d. After a tD delay, a pulse CE 1 to a VIL level for a duration of tP.

e. After tP and a tD delay, remove VOP from the programmed output.

f. Other bits in the same word may be programmed sequentially while the VCC input is at the VCCP level by applying VOP pulses to each output to be programmed and pulsing CE 1 to the VIL level, allowing for proper delays between VOP and CE 1.

g. Repeat 4.8b through 4.8e for all bits to be programmed.

h. To verify programming, lower VCCP to VCC. Connect a 10 kn resistor between each output and VCC.

Apply VIL to CE 1 input. The programmed outputs should remain in the high state and the unprogrammed outputs should go to the low level.