MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVD. Programming characteristics for circuit D - Continued.

Ramp characteristics

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
Programming current linear point	IOPLP			10	20	mA
Output programming current limits	IOP(MAX)	Apply current ramp to selected output	155	160	165	mA
Output programming voltage limit	VOP(MAX)		24	25	26	V
Current slew rate	SRIOP	Constant after linear point	0.9	1.0	1.1	mA/µs
Blow sense voltage	VPS		0.7			V
Delay to programming ramp	tdBP		2.0	3.0		µs
Time to reach linear point	tLP		0.2	1.0	10	µs
Program sense inhibit	tss		2.0	3.0	10	µs
Time to program fuse	ttp		3.0		150	µs
Programming ramp hold time	thAP	After fuse programs	1.4	1.5	1.6	µs
Programming ramp fall time 2/	tfIOP			0.1	0.2	µs

1/ TC = +25°C

2/ Rise and fall times are from 10% to 90%.

3/ Total time VCC is on to program fuse is equal to or greater than the sum of all the specified delays, pulse widths and rise/fall times.

4/ tOFF is equal to or greater than tON.

5/ Proceed to next address after read strobe indicates programmed cell.

TABLE IVE. Programming characteristics for circuit E - Discontinued.