MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVC. Programming characteristics for circuit C, device type 05 - Continued.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
Programming voltage to VCC 2/	VCCP	ICCP = 425 ±75 mA Transient or steady-state	8.5	8.75	9.0	V
Verify voltage	VCCV		4.75	5.0	5.25	V
Input voltage, high level "1"	VIH	IIH = 50 µA	2.4	3.0	5.5	V
Input voltage, low level "O"	VIL	IIL = 500 µA	0.0	0.0	0.5	V
Forced output current	IOPF	VOPF = 17.5 ± 0.5 V	150	185	220	mA
Forced output voltage (program) 3/	VOPF1	IOPF = 300 ± 25 mA	17.0	17.5	18.0	V
Forced output voltage (program) 3/	VOPF2	IOPF = 300 ± 25 mA	20.0		22.0	V
Output voltage high	VOH		2.4		5.25	V
Output voltage low	VOL		0.0		0.45	V
VCC delay time	TD1	50% to 10% VCCP	10	10	25	µs
VOUT delay time	TD2	90% VCCP to 10% VOFF	1.0	1.0	5.0	µs
Pulse sequence delays	TD3 - TD8	See figure 5C	1.0	1.0	10	µs
VCC rise time	TR1	0 % to 100%	4.0	7.0	8.0	µs
VOUT rise time	TR2	10% to 90%	3.0	10	17	µs
VCC fall time	TF1	100% to 0%	2.0	4.0	10	µs
VOUT fall time	TF2	100% to 0%	4.0	7.0	20	µs
CE 2 programming pulse width 4/	TP	10% to 10%	5.0	10	30	µs
CE 2 verify pulse width 4/	TV	10% to 10%	5.0	5.0	10	µs
Clock pulse width (CK)	TWC	50% to 50%	0.5	0.75	1.0	µs

1/ TC = +25°C.

2/ If the overall program/verify cycle exceeds the recommended value, a 25% duty cycle must be used for VCCP.

3/ VOPF supply should regulate to ±0.25 V at IOPF. Maximum slew rate for VOPF should be 1.0 V/µs.

4/ CE 2 rise time slew rate should be 1.0 V/ns maximum. CE 2 fall time slew rate should be 10.0 V/ns maximum.