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MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F


TABLE IVG.  Programming characteristics for circuit G.



Parameter


Symbol


Conditions  1/

Limits

Unit

Min

Recommended

Max

Required VCC  for programming

VCCP

10.0

10.5

11.0

V

ICC  during programming

ICCP

VCC  = 11 V

750

mA

Required output voltage for programming

VOP

10.0

10.5

11.0

V

Output current while

programming

IOP

VOUT  = 11 V

20

mA

Rate of voltage change of VCC  or output

IRR

1.0

10.0

V/µs

Programming pulse width (enabled)

PWE

9

10

11

µs

Required VCC  for verification

VCCV

3.8

4.0

4.2

V

Maximum duty cycle for

VCC  at VCCP

MDC

25

25

%

Address set-up time

t1

100

ns

VCCP  set-up time

t2

2/

5

µs

VCCP  hold time

t5

100

ns

VOP  set-up time

t3

100

ns

VOP  hold time

t4

100

ns


1/  TC  = +25°C.


2/  VCCP  setup time may be greater than 0 if VCCP  rises at the same rate or faster than VOP.


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