MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVB. Programming characteristics for circuit B.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
VCC required during programming	VCCP		10.5	11.0	11.5	V
VOUT current limit during programming	IOP		20	25	30	mA
Output programming voltage	VOUT		10.5	11.0	11.5	V
Pulse width of programming voltage	tP		9	10	11	µs
Programming delay	tD		0	1	10	µs
VCCP or VOUT transition time	tTLH	Rise time of VCC or VOUT	1	5	10	V/µs
VCCP current	ICCP		800	900	1,000	mA
Low VCC for verification	VCCL		3.9	4.0	4.1	V
High VCC for verification	VCCH		5.8	6.0	6.2	V
Address input voltage	VIH		2.4	5.0	5.5	V
Address input voltage	VIL		0.0	0.4	0.8	V
Maximum duty cycle during automatic programming of program pin and output pin	D.C.	tP/ tC	----	25	50	%

1/ TC = +25°C.