MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/210F

TABLE IVF. Programming characteristics for circuit F.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
VCC required during programming	VCCP		5.4	5.5	5.6	V
Rise time of program pulse to data out or program pin	tTLH		0.34	0.40	0.46	V/µs
Programming voltage on program pin	VPP		32.5	33	33.5	V
Output programming voltage	VOUT		25.5	26	26.5	V
Programming pin pulse width ( CE )	tPP	Chip disabled, VCC = 5.5 V	----	100	180	µs
Pulse width of programming voltage	tp	Chip disabled, VCC = 5.5 V	1		40	µs
Required current limit of power supply feeding program pin and output during program	IL	VPP = 33 V, VOUT = 26 V, VCC = 5.5 V	240		----	mA
Required time delay between disabling memory output and application of output programming pulse	TD1	Measured at 10% levels	70	80	90	µs
Required time delay between removal of programming pulse and enabling memory output	TD2	Measured at 10% levels	100			ns
Output current during verification	IOLV1	Chip enabled, VCC = 4.0 V	11	12	13	mA
Output current during verification	IOLV2	Chip enabled, VCC = 7.0 V	0.19	0.2	0.21	mA
Address input voltage	VIH		2.4	5.0	5.5	V
Address input voltage	VIL		0.0	0.4	0.8	V
Maximum duty cycle during automatic programming of program pin and output pin	D.C.	tp/tc	----	----	25	%

1/ TC = 25°C