MIL-M-38510-210 Microcircuit, Digital, 16,384 Bit Schottky, Bipolar, Programmable Read-Only Memory Prom Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, platinum-silicide, tungsten W, titanium-tungsten TiW or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MILITARY SPECIFICATION

INCH-POUND MIL-M-38510/210F

19 June 2013

SUPERSEDING MIL-M-38510/210E

27 March 2006

MICROCIRCUIT, DIGITAL, 16,384 BIT SCHOTTKY, BIPOLAR, PROGRAMMABLE READ-ONLY MEMORY (PROM), MONOLITHIC SILICON

Inactive for new design after 24 July 1995

This specification is approved for use by all Departments and Agencies of the Department of Defense.

The requirements for acquiring the product herein shall consist of this specification sheet and MIL-PRF 38535.

1. SCOPE

1.1 Scope. This specification covers the detail requirements for monolithic silicon, programmable read-only memory (PROM) microcircuits which employ thin film nichrome (NiCr) resistors, platinum-silicide, tungsten (W), titanium-tungsten (TiW) or zapped vertical emitter as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.4).

1.2 Part or Identifying Number (PIN). The PIN is in accordance with MIL-PRF-38535, and as specified herein.

1.2.1 Device types. The device types are as follows:

Device type	Circuit	Access times (ns)
01	2048 words/8 bits per word PROM with uncommitted	100, 50
	collector
02	2048 words/8 bits per word PROM with active pull-up	100, 50
	and a third high-impedance state output
03	2048 words/8 bits per word PROM with uncommitted	55, 30
	collector
04	2048 words/8 bits per word PROM with active pull-up	55, 30
	And a third high-impedance state output
05	4096 words/4 bits per word PROM with active pull-up	80, 40
	and a third high-impedance state output

1.2.2 Device class. The device class is the product assurance level as defined in MIL-PRF-38535.

1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:

Outline letter J	Descriptive designator GDIP1-T24 or CDIP2-T24	Terminals 24	Package style Dual-in-line
K	GDFP2-F24 or CDFP3-F24	24	Flat pack
R	GDIP1-T20 or CDIP2-T20	20	Dual-in-line
L	GDIP3-T24 or CDIP4-T24	24	Dual-in-line
3	CQCC1-N28	28	Square leadless chip carrier

Comments, suggestions, or questions on this document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DLA Land and Maritime-VAS, P. O. Box 3990, Columbus, OH 43218-3990, or emailed to memory@dla.mil . Since contact information can change, you may want to verify the currency of this address information using the ASSIST Online database at https://assist.dla.mil

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