MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/209H

4.13    Programming procedure for circuit G.  The waveforms on figure 5G, the programming characteristics in table IVG and the following procedures shall apply for programming the device:

a.  Connect the device in the electrical configuration for programming.

b.  Select the desired word by applying high or low levels to the appropriate address inputs.  Disable the device by applying a high level to one or more active low chip enable inputs.  Note that the address and enable inputs must be driven with TTL logic levels during programming and verification.

c.   Increase VCC from nominal to VCCP (10.5 ±0.5 V) with a slew rate limit of IRR (1.0 to 10.0 V/µs).  Since

VCC is the source of the current required to program the fuse, as well as the ICC for the device at the programming voltage, it must be capable of supplying 750 mA at 11.0 volts.

d.  Select the output where a logical high is desired by raising that output voltage to VOP (10.5 ±0.5 V).  Limit the slew rate to IRR (1.0 to 10.0 V/µs).  This voltage change may occur simultaneously with the VCC increase to VCCP, but must not precede it.  It is critical that only one output at a time be programmed since

the internal circuits can only supply programming current to one bit at a time.  Outputs not being

programmed must be left open or connected to a high impedance source of 20 kn minimum (remember that the outputs of the device are disabled at this time).

e.  Enable the device by taking the chip enables to a low level.  This is done with a pulse PWE for 10 µs.  The

10 µs duration refers to the time that the circuit (device) is enabled.  Normal input levels are used and rise and fall times are not critical.

f.   Verify that the bit has been programmed by first removing the programming voltage from the output and then reducing VCC to 5.0 V (±0.25 V).  The device must be enabled to sense the state of the outputs. During verification, the loading of the output must be within specified IOL and IOH limits.

g.  If the device is not to be tested for VOH over the entire operating range subsequent to programming, the verification of step f is to be performed at a VCC level of 4.0 volt ( ±0.2 V ).  VOH, during the 4 volt verification, must be at least 2.0 volts.  The 4 volt VCC verification assures minimum VOH levels over the

entire operating range.

h.  Repeat steps 4.13b through 4.13f for each bit to be programmed to a high level.  If the procedure is performed on an automatic programmer, the duty cycle of VCC at the programming voltage must be limited

to a maximum of 25 percent.  This is necessary to minimize device junction temperature.  After all selected

bits are programmed, the entire contents of the memory should be verified.

i.    For class S and B devices, if any bit does not verify as programmed it shall be considered a programming reject.

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