MIL-M-38510/209H
4.12 Programming procedure for circuit F. The waveforms on figure 5F, the programming characteristics in table IVF and the following procedures shall apply for programming the device:
a. Connect the device in the electrical configuration for programming.
b. Raise VCC to 5.5 volts.
c. Address the PROM with the binary address of the selected word to be programmed.
Address inputs are TTL compatible.
d. Disable the chip by applying VIH to the CE inputs and VIL to the CE inputs.
The chip enable inputs are TTL compatible.
e. Apply the VPP pulse to the programming pin ( CE 2). In order to insure that the output transistor is off before increasing the voltage on the output pin, the programming pin's voltage pulse shall precede the
output pin's programming pulse by TD1 and leave after the output pin's programming pulse by TD2
(see figure 5F).
f. Apply only one VOUT pulse with duration of tP to the output selected for programming. The outputs shall be programmed one output at a time since internal decoding circuitry is capable of sinking only one unit of programming current at a time. Note that the PROM is supplied with fuses generating a high-level logic output. Programming a fuse will cause the output to go to a low level logic in the verify mode.
g. Other bits in the same word may be programmed sequentially by applying VOUT pulses to each output to be programmed.
h. Repeat 4.12c through 4.12g for all other bits to be programmed.
i. Enable the chip by applying VIL to the CE inputs and VIH to the CE inputs, and verify the program.
Verification may check for a low output by requiring the device to sink 12 mA at VCC = 4.2 V and 0.2 mA
at VCC = 6.2 V at TC = 25°C.
j. For classes S and B devices, if any bit does not verify as programmed, it shall be considered a programming reject.
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