MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/209H

4.8    Programming procedure for circuit B, device types 03 and 04.  The waveforms on figure 5B, the programming characteristics in table IVB and the following procedures shall apply for programming the device:

a.  Connect the device in the electrical configuration for programming.

b.  Raise VCC to 5.5 volts.

c.   Address the PROM with the binary address of the selected word to be programmed.

Address inputs are TTL compatible.

d.  Disable the chip by applying VIH to the CE inputs and VIL to the CE inputs.

The chip enable inputs are TTL compatible.

e.  Apply the VPP pulse to the programming pin (CE2).  In order to insure that the output transistor is off before

increasing the voltage on the output pin, the programming pin's voltage pulse shall precede the output pin's

programming pulse by TD1 and leave after the output pin's programming pulse by TD2 (see figure 5B).

f.   Apply only one VOUT pulse with duration of tP to the output selected for programming.  The outputs shall be programmed one output at a time, since internal decoding circuitry is capable of sinking only one unit of programming current at a time.  Note that the PROM is supplied with fuses generating a high-level logic output.  Programming a fuse will cause the output to go to a low-level logic in the verify mode.

g.  Other bits in the same word may be programmed sequentially by applying VOUT pulses to each output to be programmed.

h.  Repeat 4.8c through 4.8g for all other bits to be programmed.

i.    Enable the chip by applying VIL to the  CE . Inputs and VIH to the CE inputs, and verify the program.

Verification may check for a low output by requiring the device to sink 12 mA at VCC = 4.0 V and 0.2 mA

at VCC = 7.0 V at TC = 25°C.

j.    For classes S and B devices, if any bit does not verify as programmed, it shall be considered a programming reject.

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