MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Parameter

Symbol

Conditions

Limits   1/

Unit

Min

Recommended

Max

VCC required during programming

VCCP

5.4

5.5

5.6

V

Rise time of programming pulse to

data out or

programming pin

tTLH

0.34

0.40

0.46

V/µs

Programming voltage on programming pin

VPP

32.5

33

33.5

V

Output programming voltage

VOUT

25.5

26

26.5

V

Programming pin pulse

width (  CE 2 )

tPP

Chip disabled,

VCC = 5.5 V

100

180

ns

Pulse width of programming voltage

tP

Chip disabled,

VCC = 5.5 V

1

40

µs

Required current limit of power supply feeding programming pin and

output during programming

IL

VPP = 33 V, VOUT = 26 V, VCC = 5.5 V

240

mA

Required time delay between disabling

memory output and

application of output programming pulse

TD1

Measured at 10% levels

70

80

90

µs

Required time delay between removal of programming pulse and enabling memory output

TD2

Measured at 10% levels

100

ns

Output current during verification

IOLV1

Chip enabled,

VCC = 4.0 V

11

12

13

mA

IOLV2

Chip enabled,

VCC = 7.0 V

0.19

0.2

0.21

mA

Address input voltage

VIH

2.4

5.0

5.5

V

VIL

0.0

0.4

0.8

V

Maximum duty cycle during automatic

programming of programming pin and output pin

D.C

tP / tC

25

%