MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/209H

TABLE IVD. Programming characteristics for circuit D - Continued.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
Delay to VCC off	tD(VCC)			1.0		µs
Delay to read before programming	tdRBP	Initial check	2.0	3.0		µs
Width to read compare strobe	tW			1.0		µs
Voltage change at programming	Vps	Typical 2.0 V	0.7	2.0		V
Time to program bit	ttp	Vps sensing circuit will automatically adjust this time
Duty cycle power		Maximum duty cycle to maintain in TC < +85°C		50		%
Case temperature	TC		25	85		°C

1/ TC = +25°C.