MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/209H

TABLE I. Electrical performance characteristics - Continued.

Test	Symbol	Conditions 1/ -55°C ≤ TC ≤ +125°C unless other wise specified	Device type	Limits		Units
				Min	Max
Propagation delay time, low to high level logic, address to output	tPLH1	VCC = 4.5 V and 5.5 V, CL = 30 pF, see figure 6	08		90	ns
			01, 02		125
			03, 04, 05, 06		90
			09, 10		55
Propagation delay time, high to low level logic, enable to output	tPHL2	VCC = 4.5 V and 5.5 V, CL = 30 pF, see figure 6	08		50	ns
			01, 02		60
			03, 04, 05, 06		50
			09, 10		30
Propagation delay time, low to high level logic, enable to output	tPLH2	VCC = 4.5 V and 5.5 V, CL = 30 pF, see figure 6	08		50	ns
			01, 02		60
			03, 04, 05, 06		50
			09, 10		30

1/ Complete terminal conditions shall be specified In table III.

2/ IOL = 16 mA for circuits B, D, and F devices.

3/ Not more than one output shall be grounded at one time. Output shall be at high logic level prior to test.