MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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Parameter

Symbol

Conditions   1/

Limits

Unit

Min

Recommended

Max

Address input voltage

VIH

Don't leave inputs open

2.4

5.0

5.0

V

VIL

0

0

0.4

Chip enable programming voltage

VP(CE)

CE 1 = VIL,

CE3 = CE4 =VIH,

VP(CE) =  CE 2

20.5

21.0

21.5

V

Programming voltage limit

VOP(max)

Programming current ramp voltage limit

24

25

26

V

Power supply

VCC

6.3

6.5

6.7

V

Power supply current

ICC

250

mA

Chip enable current

ICE

150

mA

Initial value of programming current

ramp

IOP(INIT)

19

20

21

mA

Maximum value of programming current ramp

IOP(max)

155

160

165

mA

Programming current ramp  (linear slew rate)

SRIOP

0.9

1.0

1.1

mA/µs

VCC pulse rise time

tr(VCC)

0.2

2.0

µs

VCC pulse fall time

tf(VCC)

0.2

2.0

µs

Chip enable rise time

tr( CE 2)

3.0

4.0

µs

Chip enable fall time

tf( CE 2)

0.2

4.0

µs

Programming current ramp fall time

tf(IOP)

0.1

0.2

µs

Hold time after programming

thap

1.4

1.5

1.6

µs

Time to reach IOP initial

tIOP

0.5

1.0

2.0

µs

Delay to start Vps sense

tdss

2.0

3.0

4.0

µs

Delay to chip enable pulse

tdce

1.0

µs

Delay to programming ramp

td(IOP)

2.0

3.0

10

µs

Delay after programming

to CE1

tdRAP

2.0

3.0

10

µs

Delay to read after programming

tdRAP

Programming verification

2.0

3.0

µs