MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/209H

NOTES:

1. All delays between edges are specified from completion of the first edge, not midpoints.

2. Delays t1, t2, t3, and t4 must be greater than 100 ns; maximum delays of 1 µs are recommended to minimize heating during programming.

3. During tV the output being programmed is switched to the load R and verified.

4. Outputs not being programmed are connected to VONP through a resistor which provides output current limiting.

5. All other waveform characteristics shall be as specified in table IVE.

FIGURE 5E. Programming voltage waveforms during programming for circuit E.