MIL-M-38510-209 Microcircuit, Digital, 8192-Bit, Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, PROM microcircuits which employ thin film nichrome NiCr resistors, zapped vertical emitter, tungsten W, titanium tungsten TiW, or platinum silicide as the fusible link or programming element. Two product assurance class and a choice of case outlines and lead finishes are provided for each type and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/209H

1.2.3 Case outlines. The case outlines are as designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

J	GDIP1-T24 or CDIP2-T24	24	Dual-in-line
K	GDFP2-F24 or CDFP3-F24	24	Flat pack
V	GDIP1-T18 or CDIP2-T18	18	Dual-in-line
x	See figure 1	18	Flat pack
y	GDFP2-F18	18	Flat pack

1.3 Absolute maximum ratings.

Supply voltage range .................................................................... -0.5 V to +7.0 V

Input voltage range ....................................................................... -1.5 V at -10 mA to +5.5 V Storage temperature range ........................................................... -65°C to +150°C

Lead temperature (soldering, 10 seconds) .................................... +300°C Thermal resistance, junction to case (eJC) :

Cases J, K, V, and y ............................................................... See MIL-STD-1835 1/

Case x .................................................................................... 35°C/W maximum 1/

Output voltage ............................................................................... -0.5 V to +VCC

Output sink current ........................................................................ 100 mA

Maximum power dissipation (PD) :

Device types 01, 02, 08, and 10 .............................................. 950 mW 2/

Device types 03, 04, 05, 06, and 09 ........................................ 1.1 W 2/

Maximum junction temperature (TJ) .............................................. +175°C

1.4 Recommended operating conditions.

Supply voltage range .................................................................... +4.5 V dc minimum to

+5.5 V dc maximum

Minimum high-level input voltage (VIH) ......................................... 2.0 V Maximum low-level input voltage (VIL) .......................................... 0.8 V

Normalized fanout (each output) :

Device types 01, 02, 08, and 10 ............................................. 12 mA 3/ Device types 03, 04, 05, 06, and 09 ....................................... 8 mA 3/

Case operating temperature range (TC) ........................................ -55 °C to +125 °C

1/ Heat sinking is recommended to reduce the junction temperature.

2/ Must withstand the added PD due to short circuit test (e.g. IOS).

3/ 16 mA for circuits B, D, and F devices.