MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

TABLE IVD. Programming characteristics for circuit D.

Parameter	Symbol	Conditions 1/	Limits			Unit
Parameter	Symbol	Conditions 1/	Min	Recommended	Max	Unit
VCC required during programming	VCCP		4.75	5.0	5.25	V
Verification VCC read	VCCL	Programming read verify	4.2	4.4	5.0	V
Input voltage, high level "1"	VIH	Do not leave inputs open	2.4	5.0	5.0	V
Input voltage, low level "0"	VIL	Do not leave inputs open	0	0	0.4	V
Output programming voltage	VOUT	Applied to output to be programmed	20	20.5	21	V
Output programming current	IOUT	If pulse generator is used, set current limit to the max value			100	mA
Programming voltage transition time	tTLH		0.5	1.0	3.0	µs
Programming pulse width	tP		50	100	180	µs
Programming duty cycle	D. C.	Maximum duty cycle to maintain TA < +85°C		20	20	%
Required delay between disabling memory output and application of output programming pulse	tD		30			ns

1/ Recommended TA = +25°C; maximum TA = +85°C.

4.11 Programming procedure for circuit F. The waveforms on figure 7f, the programming characteristics on table

IVF, and the following procedures shall apply:

a. Connect the device in the electrical configuration for programming. b. Raise VCC to 5.5 Volts.

c. Address the PROM with the binary address of the selected word to be programmed. Address inputs are

TTL compatible.

d. Disable the chip by applying VIH to the CE inputs and VIL to the CE inputs. The chip enable inputs are TTL

compatible.

e. Apply the VPP pulse to the programming pin CE 2. In order to insure that the output transistor is off before increasing voltage on the output pin, the programming pin's voltage pulse shall precede the output pin's programming pulse by TD1 and leave after the programming pin's programming pulse by TD2

(see figure 7f).

f. Apply only one VOUT pulse with duration of tP to the output selected for programming. The outputs shall be programmed one output at a time, since internal decoding circuitry is capable of sinking only one unit of programming current at a time. Note that the PROM is supplied with fuses generating a high-level logic output. Programming a fuse will cause the output to go to a low-level logic in the verify mode.