MIL-M-38510-208 Microcircuit, Digital, 4096-Bit Schottky, Bipolar, Programmable Read-Only Memory Prom, Monolithic SiliconThis specification covers the detail requirements for monolithic silicon, programmable read-only memory PROM microcircuits which employ thin film nichrome NiCr resistors, titanium-tungsten TiW, or zapped vertical emitter ZVE as the fusible link or programming element. Two product assurance classes and a choice of case outlines and lead finishes are provided and are reflected in the complete part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, see 6.4.

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MIL-M-38510/208F

3.  REQUIREMENTS

3.1  Qualification.  Microcircuits furnished under this specification shall be products that are manufactured by

a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract award (see 4.3 and 6.3).

3.2  Item requirements.  The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified herein or as modified in the device manufacturer's Quality Management (QM) plan.  The modification in the QM plan shall not affect the form, fit, or function as described herein.

3.3  Design, construction, and physical dimensions.  The design, construction, and physical dimensions shall be as specified in MIL-PRF-38535 and herein.

3.3.1  Terminal connections.  The terminal connections shall be as specified on figures 3.

3.3.2  Truth table

3.3.2.1  Unprogrammed devices.  The truth table for unprogrammed devices for contracts involving no altered item drawing shall be as specified on figure 4.  When required in groups A, B, or C (see 4.4), the devices shall be programmed by the manufacturer prior to test in a checkerboard pattern (a minimum of 50 percent of the total number of bits programmed) or to any altered item drawing pattern which includes at least 25 percent of the total number of bits programmed.

3.3.2.2  Programmed devices.   The truth table for programmed devices shall be as specified by the altered item drawing.

3.3.3  Logic diagram.  The logic diagram shall be as specified on figure 5.

3.3.4  Case outlines.  The case outlines shall be as specified in 1.2.3.

3.4  Lead material and finish.  The lead material and finish shall be in accordance with MIL-PRF-38535 (see

6.6).

3.5  Electrical performance characteristics.  The electrical performance characteristics are as specified in table I, and apply over the full recommended case operating temperature range, unless otherwise specified.

3.6  Electrical test requirements.  The electrical test requirements shall be as specified in table II, and where applicable, the altered item drawing.  The electrical tests for each subgroup are described in table III.

3.7  Marking.  Marking shall be in accordance with MIL-PRF-38535.

3.8  Processing options.  Since the PROM is an unprogrammed memory capable of being programmed by either the manufacturer or the user to result in a wide variety of configurations, two processing options are provided for selection in the contract, using an altered item drawing.

3.8.1  Unprogrammed PROM delivered to the user.  All testing shall be verified through group A testing as defined in 3.3.2.1, table II, and table III.  It is recommended that users perform subgroups 7 and 9 after programming to verify the specific program configuration.

3.8.2  Manufacturer-programmed PROM delivered to the user.  All testing requirements and quality assurance provisions herein, including the requirements of the altered item drawing, shall be satisfied by the manufacturer prior to delivery.

3.9  Microcircuit group assignment.  The devices covered by this specification shall be in microcircuit group number 14 (see Appendix A MIL-PRF-38535.)

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